NT5CB256M16BP Datasheet PDF - Nanya 4Gb DDR3 SDRAM B-Die Specs

NT5CB256M16BP - 4Gb DDR3 SDRAM B-Die

This page provides the datasheet information for the NT5CB256M16BP, a member of the NT5CB 4Gb DDR3 SDRAM B-Die family.

Datasheet Summary

Description

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 2 REV 1.0 01/ 2012 Free Datasheet http://www.0PDF. com 4Gb DDR.

Datasheet Details

Part number	NT5CB256M16BP
Manufacturer	Nanya
File Size	2.64 MB
Description	4Gb DDR3 SDRAM B-Die
Datasheet	NT5CB256M16BP Datasheet
Additional preview pages of the NT5CB256M16BP datasheet.

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Full PDF Text Transcription

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4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature  VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.

Published: Mar 22, 2014 |