Datasheet4U Logo Datasheet4U.com

N64T1630C1B - 64Mb Ultra-Low Power Asynchronous CMOS PSRAM

Description

3 A0 A3 A5 A17 A21 A14 A12 A9 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 A20 Pin Name A0-A21 WE CE ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ Pin Function Address Inputs Write Enable Input Chip Enable Input Deep Sleep Input Out

Features

  • Dual voltage rails for optimum power & performance Vcc - 2.7V - 3.3V Vccq - 2.7V to 3.3V.
  • Fast Cycle Times TACC < 70 nS (60ns future) TPACC < 25 nS.
  • Very low standby current ISB < 170µA.
  • Very low operating current Icc < 25mA.
  • PASR (Partial Array Self Refresh).
  • TCR (Temperature Compensated Refresh) Table 1: Product Family Part Number N64T1630C1BZ Package Type BGA Operating Temperature -25oC to +85oC Power Supply 2.7 - 3.3V I/O Supply 2.7 - 3.

📥 Download Datasheet

Datasheet preview – N64T1630C1B

Datasheet Details

Part number N64T1630C1B
Manufacturer NanoAmp Solutions
File Size 393.62 KB
Description 64Mb Ultra-Low Power Asynchronous CMOS PSRAM
Datasheet download datasheet N64T1630C1B Datasheet
Additional preview pages of the N64T1630C1B datasheet.

📁 Similar Datasheet

  • N6444 - N-Channel 60V MOSFET (VBsemi)
  • N64S0818HDA - 64Kb Low Power Serial SRAMs (AMI SEMICONDUCTOR)
  • N64S0830HDA - 64Kb Low Power Serial SRAMs (AMI SEMICONDUCTOR)
  • N64S818HA - 64 kb Low Power Serial SRAMs (ON Semiconductor)
  • N64S830HA - 64 kb Low Power Serial SRAMs (ON Semiconductor)
Other Datasheets by NanoAmp Solutions

    Full PDF Text Transcription

    Click to expand full text
    NanoAmp Solutions, Inc. 670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N64T1630C1B Advance Information 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M × 16 Bits Overview The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be compatible in operation and www.DataSheet4U.com interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode.
    Published: |