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1N5831 - Schottky Diode

Key Features

  • epitaxial construction with osid passivation and metal overlap contact. ideally suited for use as rectifiers in voltage, high-frequency inverters, free whelling diodes, and polarity protl diodes. Extremely Low V. Low Power LossIHigh Efficiency High Surge Capacity Case WelOed steel, hermetically seated Finish: All External Surtaces Corrosion Resistant and Terminal Lead is Readily Soklerable (C NS A NSR 11AIF 1.
  • C Solder Heat : The excellent heat transfer property of the heavy duty copp.

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Datasheet Details

Part number 1N5831
Manufacturer Naina
File Size 399.64 KB
Description Schottky Diode
Datasheet download datasheet 1N5831 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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r---------------------------------------I I I IN 5831 I NAINA I I I I 25 AMPERE 40 VOLTS I SwitchmodePowerRectifier. 7" I I I ..... ...... Low Stored Charge, Majority Carrier Conduction Mectmical Charactelistics : . . . . employing the Schottky Barrier principle in a large area melal-to-siJicon diode. State-of-the-art geometry features epitaxial construction with osid passivation and metal overlap contact. ideally suited for use as rectifiers in voltage, high-frequency inverters, free whelling diodes, and polarity protl diodes. Extremely Low V.