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MBR20020CT - (MBR20020CT - MBR20040CTR) Schottky Power Diode

Key Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER.

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Datasheet Details

Part number MBR20020CT
Manufacturer Naina Semiconductor
File Size 184.15 KB
Description (MBR20020CT - MBR20040CTR) Schottky Power Diode
Datasheet download datasheet MBR20020CT Datasheet

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Other Datasheets by Naina Semiconductor

Part Number Description
MBR20020CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR200100CT Schottky Power Diode
MBR200100CTR Schottky Power Diode
MBR20030CT (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20030CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20035CT (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20035CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20040CT (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20040CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20045CT (MBR20045CT - MBR200100CTR) Schottky Power Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM 1500 http://www.DataSheet4U.