Datasheet4U Logo Datasheet4U.com

XC7WT14 - Triple inverting Schmitt trigger

Description

The XC7WT14 is a high-speed Si-gate CMOS device.

This device provides three inverting buffers with Schmitt trigger action.

This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.

Features

  • Symmetrical output impedance.
  • High noise immunity.
  • ESD protection:.
  • HBM JESD22-A114F exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101D exceeds 1000 V.
  • Low power dissipation.
  • Balanced propagation delays.
  • Multiple package options.
  • Specified from 40 C to +85 C and 40 C to +125 C 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XC7WT14 Triple inverting Schmitt trigger nexperia
XC7WT14DP Triple inverting Schmitt trigger nexperia
XC7WH126 Dual buffer/line driver nexperia
XC7WH14 Triple inverting Schmitt trigger nexperia
XC7336 36-Macrocell CMOS EPLD Xilinx

Other Datasheets by NXP Semiconductors

Part Number Description
XC7WH126 Dual buffer/line driver
XC7WH14 Triple inverting Schmitt trigger
XC7SET02 2-input NOR gate
XC7SET04 Inverter
XC7SET08 2-input AND gate

Full PDF Text Transcription

Click to expand full text
XC7WT14 Triple inverting Schmitt trigger Rev. 3 — 23 January 2013 Product data sheet 1. General description The XC7WT14 is a high-speed Si-gate CMOS device. This device provides three inverting buffers with Schmitt trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. 2. Features and benefits  Symmetrical output impedance  High noise immunity  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  CDM JESD22-C101D exceeds 1000 V  Low power dissipation  Balanced propagation delays  Multiple package options  Specified from 40 C to +85 C and 40 C to +125 C 3.
Published: |