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RX1214B350Y - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier.

Features

  • Suitable for short and medium pulse.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms/10% • Internal input prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.
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