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PXB16050U - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.

Features

  • Input and output matching cells allow an easier design of circuits.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

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DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz.
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