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PVB42004X - NPN microwave power transistor

Description

1 APPLICATIONS

Intended for use in common base class-B power amplifiers up to 4.2 GHz.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage PVB42004X.

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DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance.
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