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PTC4001T - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with collector connected to flange.

2 Top view Marking code: 440.

QUICK REFERENCE DATA Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz.

Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good characteristics stability and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good characteristics stability and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common collector oscillator circuits under CW conditions in military and professional applications up to 5 GHz.
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