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DF N1 0
PQMD12
24 July 2013
10B -6
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
Product data sheet
1. General description
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• • • • • • •
100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height of 0.37 mm Reduces component count Reduces pick and place costs AEC-Q101 qualified
3. Applications
• • • •
Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
4. Quick reference data
Table 1.
PQMD12 Datasheet
