PMV185XN
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Low RDSon
- Very fast switching
- Trench MOSFET technology 1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.1 A; Tj = 25 °C
[1]
Conditions Tamb = 25 °C
Min -12
- Typ
- Max 30 12 1.2
Unit V V A
Static characteristics drain-source on-state resistance
[1]
- 185
250 mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
30 V, single N-channel Trench MOSFET
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