• Part: PMEG4010AESB
  • Description: low VF MEGA Schottky barrier rectifier
  • Manufacturer: NXP Semiconductors
  • Size: 201.00 KB
Download PMEG4010AESB Datasheet PDF
NXP Semiconductors
PMEG4010AESB
description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits - Average forward current: IF(AV) ≤ 1 A - Reverse voltage: VR ≤ 40 V - Low forward voltage, typical: VF = 435 m V - Low reverse current, typical: IR = 325 µA - Package height typ. 270 µm 3. Applications - Low voltage rectification - High efficiency DC-to-DC conversion - Switch mode power supply - Low power consumption applications - Ultra high-speed switching - LED backlight for mobile application 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5 ; f = 20 k Hz; Tsp ≤ 145 °C; square wave Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C VR = 40 V; tp ≤ 3 ms; δ...