PMEG3020CPAS - 2A low VF dual MEGA Schottky barrier rectifier

NXP Semiconductors

Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solder

Features

Average forward current IF(AV) ≤ 2 A.
Reverse voltage VR ≤ 30 V.
Low forward voltage VF ≤ 440 mV.
Low reverse current.
Reduced Printed-Circuit-Board (PCB) area requirements.
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity.
Leadless small SMD plastic package with visible and solderable side pads.
Suitable for Automatic Optical Inspection (AOI) of solder joints.
AEC-Q101 qualified 3.

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PMEG3020CPAS 2a low vf dual mega schottky barrier rectifier by NXP - Datasheet Preview

Datasheet Details

Part number	PMEG3020CPAS
Manufacturer	NXP Semiconductors
File Size	221.14 KB
Description	2A low VF dual MEGA Schottky barrier rectifier
Datasheet	PMEG3020CPAS Datasheet

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Full PDF Text Transcription

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DFN2020D-3 PMEG3020CPAS 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 20 January 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2.

Published: Feb 2, 2016 |