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PMBTA45 - NPN High-voltage Low VCEsat (BISS) Transistor

Datasheet Summary

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9050T.

Features

  • I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3.

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Datasheet Details

Part number PMBTA45
Manufacturer NXP
File Size 129.14 KB
Description NPN High-voltage Low VCEsat (BISS) Transistor
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PMBTA45 500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications I I I I I I I www.DataSheet4U.com Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor management Flyback converters Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1.
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