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PLB16030U - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class B narrowband amplifier.

Features

  • Input and output matching cell allows an easier design of circuits.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16030U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base class B power amplifiers at 1.6 GHz. Also suitable for operation in the frequency range 1.4 to 1.8 GHz.
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