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PHT8N06T - TrenchMOS transistor Standard level FET

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching.

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Datasheet Details

Part number PHT8N06T
Manufacturer NXP
File Size 72.26 KB
Description TrenchMOS transistor Standard level FET
Datasheet download datasheet PHT8N06T Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications. PHT8N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 7.5 1.
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