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PHF14NQ20T - N-channel TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching SYMBOL d QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
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