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PHD34NQ10T - N-channel TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB34NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD34NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
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