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PESD5V0U4BW - Ultra low capacitance bidirectional quadruple ESD protection arrays

Download the PESD5V0U4BW datasheet PDF (PESD5V0U4BF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for ultra low capacitance bidirectional quadruple esd protection arrays.

Description

Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.

Table 1.

Features

  • I Bidirectional ESD protection of up to I ESD protection up to 10 kV four lines I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified 1.3.

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Note: The manufacturer provides a single datasheet file (PESD5V0U4BF-NXP.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by NXP

Full PDF Text Transcription

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PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays Rev. 01 — 15 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD5V0U4BF SOT886 PESD5V0U4BW SOT665 JEDEC MO-252 - Package configuration leadless ultra small ultra small and flat lead 1.2 Features I Bidirectional ESD protection of up to I ESD protection up to 10 kV four lines I Ultra low diode capacitance: Cd = 2.
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