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PESD5V0U2BMB - Ultra low capacitance bidirectional double ESD protection array

Datasheet Summary

Description

Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients.

The device is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Device (SMD) plastic package.

Features

  • ESD protection of up to two lines.
  • AEC-Q101 qualified.
  • Ultra low diode capacitance Cd = 2.9 pF.
  • ESD protection up to 10 kV.
  • Ultra low leakage current IRM = 5 nA.
  • IEC 61000-4-2; level 4 (ESD) 1.3.

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Datasheet Details

Part number PESD5V0U2BMB
Manufacturer NXP
File Size 186.03 KB
Description Ultra low capacitance bidirectional double ESD protection array
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Full PDF Text Transcription

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SOT883B PESD5V0U2BMB Ultra low capacitance bidirectional double ESD protection array Rev. 1 — 13 March 2012 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  ESD protection of up to two lines  AEC-Q101 qualified  Ultra low diode capacitance Cd = 2.9 pF  ESD protection up to 10 kV  Ultra low leakage current IRM = 5 nA  IEC 61000-4-2; level 4 (ESD) 1.
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