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PESD5V0S4UF - Unidirectional quadruple ESD protection diode arrays

Download the PESD5V0S4UF datasheet PDF (PESD3V3S4UF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for unidirectional quadruple esd protection diode arrays.

Description

Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients.

Features

  • I ESD protection of up to four lines I Max. peak pulse power: PPP = 110 W I Low clamping voltage: VCL = 11 V I Ultra low leakage current: IRM = 4 nA I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 10 A I AEC-Q101 qualified 1.3.

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Note: The manufacturer provides a single datasheet file (PESD3V3S4UF-NXP.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by NXP

Full PDF Text Transcription

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PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays Rev. 01 — 17 January 2008 Product data sheet 1. Product profile 1.1 General description Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features I ESD protection of up to four lines I Max. peak pulse power: PPP = 110 W I Low clamping voltage: VCL = 11 V I Ultra low leakage current: IRM = 4 nA I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 10 A I AEC-Q101 qualified 1.
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