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PESD5V0S2UQ - (PESDxS2UQ) Double Esd Protection Diode

Description

Uni-directional double ESD protection diodes in a SOT663 plastic package.

Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.

MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Note 1.

= p : made in Hong Kong.

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Features

  • Uni-directional ESD protection of up to two lines.
  • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs.
  • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A.
  • Low reverse leakage current: IRM < 1 nA.
  • ESD protection > 30 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D793 www.DataSheet4U.com PESDxS2UQ series Double ESD protection diodes in SOT663 package Product specification Supersedes data of 2003 Dec 15 2004 Apr 27 Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package FEATURES • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • High speed data lines • Parallel ports.
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