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PESD3V3L5UV - Low capacitance 5-fold ESD protection diode arrays

Download the PESD3V3L5UV datasheet PDF. This datasheet also covers the PESD5V0L5UV variant, as both devices belong to the same low capacitance 5-fold esd protection diode arrays family and are provided as variant models within a single manufacturer datasheet.

Description

DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).

Features

  • Uni-directional ESD protection of up to five lines.
  • Bi-directional ESD protection of up to four lines.
  • Low diode capacitance.
  • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs.
  • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
  • ESD protection > 20 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PESD5V0L5UV_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
PESD3V3L5UV Low capacitance unidirectional fivefold ESD protection diode arrays
PESD3V3L5UF Low capacitance unidirectional fivefold ESD protection diode arrays
PESD3V3L5UK Low capacitance unidirectional fivefold ESD protection diode arrays
PESD3V3L5UY Low capacitance 5-fold ESD protection diode arrays
PESD3V3L5UY Low capacitance unidirectional fivefold ESD protection diode arrays

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package FEATURES • Uni-directional ESD protection of up to five lines • Bi-directional ESD protection of up to four lines • Low diode capacitance • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V • ESD protection > 20 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.
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