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PDTD113ZT - NPN resistor-equipped transistor

General Description

NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTB113ZT.

Key Features

  • I Built-in bias resistors I Simplifies circuit design I 500 mA output current capability I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 02 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT. 1.2 Features I Built-in bias resistors I Simplifies circuit design I 500 mA output current capability I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Controlling IC inputs I Cost-saving alternative for BC817 series in digital applications I Switching loads 1.4 Quick reference data Table 1.