• Part: PDTC143ZT
  • Description: NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 50.65 KB
Download PDTC143ZT Datasheet PDF
NXP Semiconductors
PDTC143ZT
FEATURES - Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP plement: PDTA143ZT. 1 Top view 2 MAM097 PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION dbook, 4 columns 3 3 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC143ZT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MGA893 - 1 MARKING CODE(1) ∗18 1 3 Fig.2 Equivalent inverter symbol. 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage...