Download PDTA143ES Datasheet PDF
NXP Semiconductors
PDTA143ES
FEATURES - Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a TO-92; SOT54 plastic package. NPN plement: PDTC143ES. PINNING MGL136 MAM338 PDTA143ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. 1 3 PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground (+) Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot h FE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C VCE = - 5 V; IC = - 10 m A CONDITIONS open base - - - - 30 3.3 0.8 MIN. - - - - - 4.7 1 TYP. MAX. - 50 - 100 - 100 500 - 6.1 1.2 kΩ...