Download PDTA124ES Datasheet PDF
NXP Semiconductors
PDTA124ES
FEATURES - Built-in bias resistors R1 and R2 (typ. 22 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a TO-92; SOT54 plastic package. NPN plement: PDTC124ES. 1 2 3 MGL136 MAM338 PDTA124ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground (+) Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot h FE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = - 5 m A; VCE = - 5 V CONDITIONS open base MIN. - - - - 60 15.4 0.8 TYP. - - - - - 22 1 MAX. - 50 - 100 - 100 500 - 28.6 1.2 kΩ UNIT V...