Download PDTA114TE Datasheet PDF
NXP Semiconductors
PDTA114TE
FEATURES - Built-in bias resistor R1 (typ. 10 kΩ) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuit applications - Inverter circuit configurations without use of an external resistor. 1 Top view 2 handbook, 4 columns 3 3 R1 1 2 MAM359 Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in an SC-75 plastic package. NPN plement: PDTC114TE. 1 3 2 MARKING TYPE NUMBER PDTA114TE MARKING CODE 11 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot h FE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = - 1 m A; VCE = - 5 V CONDITIONS open base - - - - 200 7 MIN. - - - - - 10 TYP. MAX. - 50 - 100 - 100 150 - 13 kΩ...