PBSS4220V
description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP plement: PBSS5220V.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base tp ≤ 300 µs IC = 1 A; IB = 100 m A
[1]
Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance
Min
- Typ 140
Max 20 2 4 175
Unit V A A mΩ
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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Philips Semiconductors
20...
