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MMBT2222A - NPN switching transistor

General Description

NPN switching transistor in a SOT23 plastic package.

PNP complement: PMBT2907A.

1.

= p : Made in Hong Kong.

= t : Made in Malaysia.

= W : Made in China.

Key Features

  • High current (max. 600 mA).
  • Low voltage (max. 40 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors NPN switching transistor Product data sheet MMBT2222A FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. PINNING PIN 1 2 3 DESCRIPTION base emitter collector DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. MARKING TYPE NUMBER MMBT2222A MARKING CODE(1) 7C* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol.