MC34GD3000 Datasheet Three phase field effect transistor predriver

Manufacturer: NXP Semiconductors

Datasheet Details

Part number	MC34GD3000
Manufacturer	NXP Semiconductors
File Size	837.95 KB
Description	Three phase field effect transistor predriver
Datasheet	MC34GD3000 Datasheet

The 34GD3000 is a field effect transistor (FET) predriver designed for three phase motor control and similar applications.

It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.

The IC contains three high-side FET predrivers and three low-side FET predrivers.

MC34GD3000 Three phase field effect transistor predriver Rev.

Extended supply voltage operating range: 6.0 V to 60 V.
Gate drive capability of 1.0 A to 2.5 A.
Device protection against reverse charge-injection from CGD and CGS of external FETs.
Includes a charge pump to support full FET drive at low battery voltages.
Wide dead time range (50 ns to 12 µs) programmable via the SPI port.
Integrated overcurrent, desaturation, and phase fault-detection.
Immunity against positive or negative transie.

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