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IP4856CX25C - SD 3.0-compliant memory card integrated dual voltage level translator

Download the IP4856CX25C datasheet PDF. This datasheet also covers the IP4856CX25 variant, as both devices belong to the same sd 3.0-compliant memory card integrated dual voltage level translator family and are provided as variant models within a single manufacturer datasheet.

Description

The device is an SD 3.0-compliant 6-bit bidirectional dual voltage level translator.

It is designed to interface between a memory card operating at 1.8 V or 2.9 V signal levels and a host with a fixed nominal supply voltage of 1.7 V to 3.6 V.

Features

  • Supports up to 208 MHz clock rate.
  • Feedback channel for clock synchronization.
  • SD 3.0 specification-compliant voltage translation to support SDR104, SDR50, DDR50, SDR25, SDR12, high-speed and default-speed modes.
  • 100 mA low dropout voltage regulator to supply the card-side I/Os.
  • Low power consumption by push-pull output stage with break-before-make architecture.
  • Integrated pull-up and pull-down resistors: no external resistors required.
  • Integrated EMI filters.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IP4856CX25-NXP.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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:/&63 IP4856CX25/C SD 3.0-compliant memory card integrated dual voltage level translator with EMI filter and ESD protection Rev. 2 — 15 October 2014 Product data sheet 1. General description The device is an SD 3.0-compliant 6-bit bidirectional dual voltage level translator. It is designed to interface between a memory card operating at 1.8 V or 2.9 V signal levels and a host with a fixed nominal supply voltage of 1.7 V to 3.6 V. The device supports SD 3.0, SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 high-speed (50 MHz) and default-speed (25 MHz) modes. The device has an integrated voltage selectable low dropout regulator to supply the card-side I/Os, built-in EMI filters and robust ESD protections (IEC 61000-4-2, level 4). 2.
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