Datasheet4U Logo Datasheet4U.com

HEF4720V - 256-bit/ 1-bit per word random access memories

Description

The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs.

The memories are fully decoded and completely static.

Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HEF4794B 8-stage shift-and-store register LED driver Philips
HEF4794B 8-stage shift-and-store register LED driver nexperia
HEF4794B-Q100 8-stage shift-and-store register LED driver nexperia
HEF4001B Quadruple 2-input NOR gate Philips
HEF4001B Quad 2-input NOR gate nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
HEF4720B 256-bit/ 1-bit per word random access memories
HEF4724B 8-bit addressable latch
HEF4731B Quadruple 64-bit static shift register
HEF4731V Quadruple 64-bit static shift register
HEF4737B Quadruple static decade counters

Full PDF Text Transcription

Click to expand full text
INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC • The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC HEF4720B HEF4720V LSI 256-bit, 1-bit per word random access memories Product specification File under Integrated Circuits, IC04 January 1995 Philips Semiconductors Product specification 256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.
Published: |