Download EC103D1 Datasheet PDF
NXP Semiconductors
EC103D1
description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package. 2. Features and benefits - Planar passivated for voltage ruggedness and reliability - Ultra sensitive gate 3. Applications - Electronic ballasts - Safety shut down and protection circuits - Sensing circuits - Smoke detectors - Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 IT(AV) average on-state current half sine wave; Tlead ≤ 92 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 92 °C; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 10 m A; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 400 V - - 400 V - - 8A - - 0.5 A - - 0.8 A - 3 12 µA Scan or click this QR code to...