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BUW14 - Silicon Diffused Power Transistor

Description

High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V TYP. 0.4 MAX. 1000 450 0.
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