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BUW13F - Silicon diffused power transistors

Description

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package.

Converters Inverters Switching regulators

Motor control systems.

Features

  • contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the devi.

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BUW13AF Silicon diffused power transistors
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated 1 Front view ook, halfpage BUW13F; BUW13AF handbook, halfpage 2 1 MBB008 3 2 3 MSB012 Fig.1 Simplified outline (SOT199) and symbol.
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