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BUT211 - Silicon Diffused Power Transistor

Description

Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

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Datasheet Details

Part number BUT211
Manufacturer NXP
File Size 70.82 KB
Description Silicon Diffused Power Transistor
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 100 2.0 0.1 UNIT V V A A W V µs Tmb ≤ 25 ˚C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.
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