BUK9MGP-55PTS Datasheet PDF - NXP Dual TrenchPLUS Logic Level FET Specs

BUK9MGP-55PTS - Dual TrenchPLUS Logic Level FET

Datasheet Summary

Description

Dual N-channel enhancement mode field-effect power transistor in SO20.

Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.

Features

Integrated current sensors.
Integrated temperature sensors 1.3.

Datasheet Details

Part number	BUK9MGP-55PTS
Manufacturer	NXP
File Size	396.31 KB
Description	Dual TrenchPLUS Logic Level FET
Datasheet	BUK9MGP-55PTS Datasheet
Additional preview pages of the BUK9MGP-55PTS datasheet.

📁 Similar Datasheet

BUK9M10-30E - N-channel MOSFET (nexperia)

BUK9M11-40E - N-channel MOSFET (nexperia)

BUK9M11-40H - 40V N-Channel MOSFET (nexperia)

BUK9M12-60E - N-channel MOSFET (nexperia)

BUK9M120-100E - N-channel MOSFET (nexperia)

BUK9M14-40E - N-channel MOSFET (nexperia)

BUK9M15-40H - N-channel MOSFET (nexperia)

BUK9M15-60E - N-channel MOSFET (nexperia)

BUK9M156-100E - N-channel MOSFET (nexperia)

BUK9M17-30E - N-channel MOSFET (nexperia)

Full PDF Text Transcription

Click to expand full text

BUK9MGP-55PTS www.DataSheet4U.com Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits Integrated current sensors Integrated temperature sensors 1.3 Applications Lamp switching Motor drive systems Power distribution Solenoid drivers 1.4 Quick reference data Table 1.

Published: Jul 7, 2009 |