BUK7635-55 - TrenchMOS transistor Standard level FET
NXP Semiconductors
General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.
Key Features
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching.
Full PDF Text Transcription for BUK7635-55 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK7635-55. For precise diagrams, and layout, please refer to the original PDF.
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power tra...
View more extracted text
PTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK7635-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
BUK7635-55 Datasheet
