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BUK7626-100B - TrenchMOS standard level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK).

Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3.

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Full PDF Text Transcription

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BUK75/7626-100B TrenchMOS™ standard level FET Rev. 01 — 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 144 mJ s ID ≤ 49 A s RDSon = 22 mΩ (typ) s Ptot ≤ 157 W. 2.
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