BUK7506-55A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance.
Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK).
2. Features s Trench MOS™ technology s Q101 pliant s 175 °C rated s Standard level patible.
3. Applications s Automotive and general purpose power switching: c c x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning
- SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g) 2 drain (d) mb
3 source (s) mb mounting base; connected to drain (d) mb
MBK106
SOT78 (TO-220AB)
2 1 3 MBK116
SOT404 (D2-PAK)
Symbol d g
MBB076 s
Philips Semiconductors
BUK7506-55A; BUK7606-55A
Trench MOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power...
