BUK624R5-30C
description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V Automotive systems
- HVAC
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min
- Typ
- Max Unit 30 75 158 V A W
Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; Tj = 25 °C;...
