Datasheet4U Logo Datasheet4U.com

BUK581-100A - PowerMOS transistor Logic level FET

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

The device is intended for use in automotive and general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK555-100A N-Channel MOSFET INCHANGE
BUK555-100B N-Channel MOSFET INCHANGE
BUK118-50DL Monolithic temperature and overload protected logic level power MOSFET NXP Semiconductors
BUK127-50GT PowerMOS transistor Philips
BUK138-50DL Logic level TOPFET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
BUK581-60A PowerMOS transistor Logic level FET
BUK582-100A PowerMOS transistor Logic level FET
BUK582-60A PowerMOS transistor Logic level FET
BUK583-60A PowerMOS transistor Logic level FET
BUK542-100A PowerMOS transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. BUK581-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 100 0.9 1.5 150 0.
Published: |