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BUK566-60A - PowerMOS transistor Logic level FET

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK566-60A QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance VGS = 5 V MAX.
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