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BUK543-60B - PowerMOS transistor

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

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Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK543-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK543 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS 5 V MAX. -60A 60 13 25 0.085 MAX. -60B 60 12 25 0.
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