Datasheet4U Logo Datasheet4U.com

BUK107-50GL - PowerMOS transistor Logic level TOPFET

Description

Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications.

Features

  • Vertical power DMOS output stage Overload protected up to 85˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK118-50DL Monolithic temperature and overload protected logic level power MOSFET NXP Semiconductors
BUK127-50GT PowerMOS transistor Philips
BUK138-50DL Logic level TOPFET Philips
BUK139-50DL TOPFET nexperia
BUK208-50Y (BUK213-50Y / BUK208-50Y) Single channel high-side TOPFET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BUK107-50DL PowerMOS transistor Logic level TOPFET
BUK107-50DS PowerMOS transistor Logic level TOPFET
BUK100-50DL PowerMOS transistor Logic level TOPFET
BUK100-50GL PowerMOS transistor Logic level TOPFET
BUK100-50GS PowerMOS transistor TOPFET

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK107-50DL QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance MAX. 50 0.7 1.
Published: |