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BUK101-50GS - PowerMOS transistor TOPFET

General Description

Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

Key Features

  • Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads.

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Full PDF Text Transcription for BUK101-50GS (Reference)

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Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope...

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rature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK101-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX.

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