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BUJ403BX - Silicon Diffused Power Transistor

Description

High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat hFEsat tfi PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 18 0.14 21 140 MAX.
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