Datasheet4U Logo Datasheet4U.com

BUJ106A - Silicon Diffused Power Transistor

Description

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

📥 Download Datasheet

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
Published: |