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BU2720DX - Silicon Diffused Power Transistor

Description

High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.

Intended for use in horizontal deflection circuits of colour television receivers.

Designed to withstand VCES pulses up to 1700V.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.5 7.4 MAX. 1700 825 10 25 45 1.0 8.5 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.
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